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Frontiers of Optoelectronics, Volume. 8, Issue 4, 456(2015)

Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices

Bo SHEN*
Author Affiliations
  • Research Center for Wide Bandgap Semiconductors and State Key Laboratory of Artificial Microstructures and Mesoscopic Physics,School of Physics, Peking University, Beijing 100871, China
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    Bo SHEN. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices[J]. Frontiers of Optoelectronics, 2015, 8(4): 456

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    Paper Information

    Category: ERRATUM

    Received: Jun. 30, 2014

    Accepted: Sep. 18, 2014

    Published Online: Jan. 6, 2016

    The Author Email: Bo SHEN (bshen@pku.edu.cn)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology