Optics and Precision Engineering, Volume. 19, Issue 6, 1192(2011)

Design and manufacture on multilayers of low-Z materials at 14 nm

WU Wen-juan1、*, ZHANG Zhong2, ZHU Jing-tao2, WANG Feng-li2, CHEN Ling-yan2, ZHOU Hong-jun3, and HUO Tong-lin3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    In order to decrease the bandwidth of the normal multilayers and improve the spectral resolution, several kinds of multilayers composed of low-Z materials were investigated in extreme ultraviolet and soft X-ray regions. Firstly, three kinds of multilayers of low-Z materials, Si/B4C,Si/C and Si/SiC multilayers were chosen at the wavelength of 14 nm and these multilayers and a normal Mo/Si multilayer were designed by using a random search method. Then all these multilayers were fabricated with a DC magnetron sputtering system and the thicknesses were measured by an X-ray diffractometer. Finally, the reflectivities of multilayers were measured by the synchrotron radiation. The synchrotron radiation tests show that the largest bandwidth of these multilayers is from the Mo/Si multilayer in 0.57 nm, and the smallest one is from Si/SiC multilayer in 0.18 nm.The results correspond with the design and demonstrate that the bandwidths of multilayers of low-Z materials are narrower than that of the normal Mo/Si multilayer and the multilayers of low-Z materials can achieve a higher spectral resolution.

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    WU Wen-juan, ZHANG Zhong, ZHU Jing-tao, WANG Feng-li, CHEN Ling-yan, ZHOU Hong-jun, HUO Tong-lin. Design and manufacture on multilayers of low-Z materials at 14 nm[J]. Optics and Precision Engineering, 2011, 19(6): 1192

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    Paper Information

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    Received: Jan. 20, 2011

    Accepted: --

    Published Online: Jul. 18, 2011

    The Author Email: WU Wen-juan (wuwjok@163.com)

    DOI:10.3788/ope.20111906.1192

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