Photonics Research, Volume. 10, Issue 5, 05001271(2022)

High-performance distributed feedback quantum dot lasers with laterally coupled dielectric gratings

Zhuohui Yang1, Zhengqing Ding1, Lin Liu1, Hancheng Zhong1, Sheng Cao1, Xinzhong Zhang1, Shizhe Lin1, Xiaoying Huang1, Huadi Deng1, Ying Yu1,*, and Siyuan Yu1,2
Author Affiliations
  • 1State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
  • 2e-mail: yusy@mail.sysu.edu.cn
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    The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultrahigh-performance semiconductor lasers for many key novel applications, as either stand-alone sources or on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb, and other material platforms has been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable, and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz local area network wavelength division multiplexing frequency intervals in the 1300 nm band with record performance parameters, including sidemode suppression ratios as high as 52.7 dB, continuous-wave output power of 26.6 mW (room temperature) and 6 mW (at 55°C), and ultralow relative intensity noise (RIN) of <-165 dB/Hz (2.5–20 GHz). The devices are also capable of isolator-free operating under very high external reflection levels of up to -12.3 dB while maintaining high spectral purity and ultralow RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, which are thus universally applicable across different material platforms and wavelength bands.

    1. INTRODUCTION

    Embedding semiconductor lasers with Bragg gratings as wavelength-selective feedback mechanisms is a well-established approach to achieving high-quality single-frequency lasing. In conjunction with the distinctive properties of various compound semiconductor gain materials, distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers are finding a wide range of applications in both classical and quantum domains, such as with InGaAs emitting in the near infrared for optical communication [1], with GaAs or GaAsP in the red spectral range [2] for atomic clocks [3], atom interferometry [4], and efficient optical pumping [5], with GaSb or InAs/AlSb in the middle to far infrared [6] for trace-gas sensing [7], and with nitride semiconductors in the green to ultraviolet for absorption spectroscopy [8] and high-density data storage [9].

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    Zhuohui Yang, Zhengqing Ding, Lin Liu, Hancheng Zhong, Sheng Cao, Xinzhong Zhang, Shizhe Lin, Xiaoying Huang, Huadi Deng, Ying Yu, Siyuan Yu. High-performance distributed feedback quantum dot lasers with laterally coupled dielectric gratings[J]. Photonics Research, 2022, 10(5): 05001271

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Jan. 19, 2022

    Accepted: Mar. 23, 2022

    Published Online: Apr. 27, 2022

    The Author Email: Ying Yu (yuying26@mail.sysu.edu.cn)

    DOI:10.1364/PRJ.454200

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