Toxicity and stability of lead halide perovskite are still crucial problem to be solved, and it is necessary to seek non- toxic and stable new optoelectronic materials with similar structure of lead halide perovskites. Chalcogenide perovskite ABX3 (X = S, Se) have become the focus of research recently for its high stability, non-toxicity and being abundant in earth element. ABX3 (X = S,Se) also has good optical and electrical properties, and can be used in various photoelectric materials, making it suitable for various optoelectronic materials. The most widely studied material is chalcogenide perovskite BaZrS3 . BaZrS3 has suitable direct bandgap, excellent light absorption, good carrier transport properties, excellent chemical stability and environmentally benign nature. This article reviews the latest progress in theoretical calculations, synthesis methods of powders and thin film of BaZrS3 , especially gives in-depth analysis of the synthesis of BaZrS3 . Key issues in the synthesis of BaZrS3 are discussed. This review will provide important references for new researchers entering this field and promote the further development of safe, stable and environmentally new generation optoelectronic materials.