In theory, the formula of transmission peak position of subwavelength hole array structure is used, aiming at the narrow-band single peak transmission results of the dielectric metal dielectric three-layer structure "double glass hole array" structure model with single peak narrow-band transmission characteristics required by the spectral detector device, and based on the existing processing technology for the more common upper edge over etching, double glass hole array structure The potential failure modes of residual hole bottom and over etching hole bottom are analyzed. Compared with the standard double glass hole array model, the effects of processing errors on narrow-band single peak transmission and the mechanism are analyzed. It has a certain guiding significance for the preparation of a new type of pixel level filter film system by using the abnormal transmission principle of double glass hole array structure to selectively transmit the incident light.