Frontiers of Optoelectronics, Volume. 7, Issue 1, 1(2014)

Recent advances in development of vertical-cavity based short pulse source at 1.55 μm

Zhuang ZHAO*, Sophie BOUCHOULE, Jean-Christophe HARMAND, Gilles PATRIARCHE, Guy AUBIN, and Jean-Louis OUDAR
Author Affiliations
  • Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Marcoussis, France
  • show less

    This paper reviews and discusses recent developments in passively mode-locked vertical external cavity surface emitting lasers (ML-VECSELs) for short pulse generation at 1.55 μm. After comparing MLVECSELs to other options for short pulse generation, we reviewed the results of ML-VECSELs operating at telecommunication wavelength and point out the challenges in achieving sub-picosecond operation from a MLVECSEL at 1.55 μm. We described our recent work in the VECSELs and semiconductor saturable absorber mirrors (SESAMs), their structure design, optimization and characterization, with the goal of moving the pulse width from picosecond to sub-picosecond.

    Tools

    Get Citation

    Copy Citation Text

    Zhuang ZHAO, Sophie BOUCHOULE, Jean-Christophe HARMAND, Gilles PATRIARCHE, Guy AUBIN, Jean-Louis OUDAR. Recent advances in development of vertical-cavity based short pulse source at 1.55 μm[J]. Frontiers of Optoelectronics, 2014, 7(1): 1

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Received: Oct. 24, 2013

    Accepted: Nov. 27, 2013

    Published Online: Jul. 10, 2014

    The Author Email: Zhuang ZHAO (zhuang.zhao@lpn.cnrs.fr)

    DOI:10.1007/s12200-014-0387-5

    Topics