Optimization of gallium nitride-based laser diode through transverse modes analysis

Xiaomin Jin; Bei Zhang; Liang Chen; Tao Dai; Guoyi Zhang

Chinese Optics Letters, Volume. 5, Issue 10, 588(2007)

Xiaomin Jin^1、*, Bei Zhang², Liang Chen², Tao Dai³, and Guoyi Zhang²

¹Electrical Engineering Department, California Polytechnic State University, San Luis Obispo, CA 93407, USA

²School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871

³RSoft Design Group, Inc., 400 Executive Boulevard, Suite 100, Ossining, NY 10562, USA

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We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.

Keywords

140.5960 220.0220 140.0140 GaN

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Xiaomin Jin, Bei Zhang, Liang Chen, Tao Dai, Guoyi Zhang, "Optimization of gallium nitride-based laser diode through transverse modes analysis," Chin. Opt. Lett. 5, 588 (2007)

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Paper Information

Received: Jul. 27, 2007

Accepted: --

Published Online: Oct. 11, 2007

The Author Email: Xiaomin Jin (xjin@calpoly.edu)

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology