A novel vertical-cavity surface-emitting laser with grading DBR is reported in this paper.The structure is obtained by twice deep H+ implantations which use a crossed tungsten wire as the implantation mask. The fabrication process is the simplest ever reported in vertical-cavity surface-emitting lasers fabrications.In the primary experiment,the lasing wavelength of 871 nm,the lowest threshold current of 18 mA and the largest output power of 2 mW are obtained under pulse condition at room temperature using a current source with a 10 μs pulse-width and 100 μs cycle. The series resistances of the device are 100～200 Ω.