Chinese Journal of Lasers, Volume. 36, Issue 6, 1539(2009)

Affect of ZnO Thin Film of Pulsed Laser Deposition by Substrate Temperatures

Chen Jiangbo1、*, Wang Li1, Su Xueqiong1, Liu Hongmei1, and Wang Rongping2
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  • 1[in Chinese]
  • 2[in Chinese]
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    In this paper, pulsed laser deposition method was applied to grow ZnO films in different temperature, with ZnO ceramics as target, sapphire Al2O3 (0001) for substrate, and using the pulsed laser GCR-170 Nd∶YAG by Spectra-Physics. The thin film structure and superficial morphology quality have been researched in experiment by atomic force microscope (AFM), photoluminescence (PL) and optical transmission spectrum, and optimize growth temperature was found to be 500 ℃ at which the ZnO films could obtain high-quality surface. The high violet light radiation have been found in experiment. The optical transmission spectrum versus the substrate temperature results showed that for the ZnO thin films prepared on sapphire, the surface morphology quality of the ZnO thin film was enhanced with increasing the substrate temperature from room temperature to 500 ℃.

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    Chen Jiangbo, Wang Li, Su Xueqiong, Liu Hongmei, Wang Rongping. Affect of ZnO Thin Film of Pulsed Laser Deposition by Substrate Temperatures[J]. Chinese Journal of Lasers, 2009, 36(6): 1539

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    Paper Information

    Category: materials and thin films

    Received: Nov. 5, 2008

    Accepted: --

    Published Online: Jun. 8, 2009

    The Author Email: Jiangbo Chen (tequila2008@emails.bjut.edu.cn)

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