Ce∶LuAG crystal is an excellent scintillation material, but cracking and inclusion defects often occur when Ce∶LuAG is grown by Czochralski method. In this paper, the effects of temperature gradient, pulling speed, rotation speed and thermal strain on crystal defects were analyzed by combining theory with practice, and the solution was put forward. The suitable technological parameters for growing Ce∶LuAG crystal with high quality are given: the temperature gradient above the melt is about 5 ℃/mm, the shoulder angle is 30°~60°, the pulling speed is 1.0~1.5 mm/h, and the crystal rotation speed is 15~25 r/min. Finally, good quality of Ce∶LuAG single crystal with a diameter of 30 mm and an equal diameter length of 50 mm is successfully grown, and the crystal core area is small.