As a promising heat dissipation material, diamond is wildly used in high power semiconductor devices, lasers, microwave devices and large-scale integrated circuit fields. The accurate local temperature measurement of diamond to evaluate its heat dissipation performance has become an important research topic. In this paper, Raman spectroscopy was employed to investigate the Raman spectra (TO mode) characteristics of diamond in the temperature range of 228 to 678 K. The one-to-one correspondence between Raman peak position, full width at half maximum (FWHM) and temperature of different doped diamond samples was established. The contributions of thermal expansion, three phonons and four phonons to Raman peak position at variable temperatures were analyzed by theoretical model calculation. The results show that there is no significant difference among the Raman spectra of different doped samples of HTHP and CVD. With the increase of temperature, the FWHM broadens. It is considered that the anharmonic effect caused by phonon attenuation is the determining factor, while the ionization rate, concentration and type of carriers, defects and impurities contribute partial influence. Meanwhile, the phonon lifetime is mainly affected by the anharmonic attenuation of phonons, and appears largely unaffected by impurity scattering. This study shed light on a non-destructive, non-contact, high spatial resolution method to the temperature measurement for diamond materials.