In this paper, the effect of the process parameters of reciprocating diamond wire saw on the surface quality of the (001) plane βGa2O3 single crystal was investigated. According to the theory of the indentation fracture mechanics, the abrasive behavior and material removal mechanism in the process of cutting βGa2O3 single crystal with diamond wire saw were investigated. The influence of the cutting direction on the surface quality of the (001) plane βGa2O3 single crystal was analyzed from the aspect of anisotropy, SEM and SJ210 roughness measuring instrument were used to explore the effect of process parameters on the quality of wafer surface after diamond wire saw. The experimental results show that the depth of subsurface damage layer can be reduced and the surface quality of the wafer can be effectively improved by increasing the wire speed or decreasing the feed rate.