Microelectronics, Volume. 55, Issue 4, 522(2025)

Design of a Reference Circuit for Low Temperature Bleach Bandgap with Segmental Curvature Compensation

QI Haihong and FENG Quanyuan
Author Affiliations
  • Microelectronics Research Institute, Southwest Jiaotong University, Chengdu 611756, P R China
  • show less

    A low temperature bleach bandgap reference source with segmental curvature compensation is designed to solve the problem of poor first-order bandgap reference temperature coefficient. The conventional first-order bandgap reference is compensated by segmental curvature, and two types of exponential compensation currents varying with temperature are generated using a MOS tube operating in the subthreshold region. The first-order coefficient temperature curve is compensated at both high and low temperatures, and the temperature coefficient of the bandgap reference source is reduced. The results of a SMIC 0.18 μm CMOS process simulation show that the bandgap reference output voltage is 1.075 V at a supply voltage of 3.3 V. The bandgap reference designed in this paper is compared with a first-order bandgap reference without curvature compensation. The temperature coefficient decreases from 9.85×10−6/℃ to 1.58×10−6/℃ in the temperature range of −40–125 ℃ at the TT corner, and the power supply rejection ratio is −46.4 dB at 100 Hz.

    Tools

    Get Citation

    Copy Citation Text

    QI Haihong, FENG Quanyuan. Design of a Reference Circuit for Low Temperature Bleach Bandgap with Segmental Curvature Compensation[J]. Microelectronics, 2025, 55(4): 522

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: May. 23, 2024

    Accepted: Sep. 9, 2025

    Published Online: Sep. 9, 2025

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.240176

    Topics