AlGaN-based materials are ideal for the preparation of ultraviolet (UV) optoelectronic devices as tunable, direct and wide band gap semiconductor materials. In the absence of access to large-size, low-cost homogeneous substrates, heterogeneous epitaxy of high-quality AlN films is the key to facilitate the development of UV optoelectronic devices. In this work, the metal organic chemical vapor deposition (MOCVD) growth pattern of AlN on sapphire substrates was adjusted to generate high density nanoscale holes, and the holes were used to reduce the dislocations of AlN. Based on this, the AlGaN quantum well structure was epitaxially developed. Deep-UV LED films in the 275 nm band were obtained by epitaxy, and a deep-UV LED device with an on voltage of 4.8V and a reverse leakage current of 2.23 μA (at -3.0 V voltage) was fabricated.