Chinese Journal of Lasers, Volume. 9, Issue 3, 147(1982)
Preparation of recombination-type GaAs materials for CW high power CO2 laser windows
The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method (LEC). The material is of lower absorption coefficient, higher infrared transmittance and good thermal stability. It has been proved that this material can fully meet the requirements for CW highpower CO3 laser windows.
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Li Guanghua, Zhang Guoli. Preparation of recombination-type GaAs materials for CW high power CO2 laser windows[J]. Chinese Journal of Lasers, 1982, 9(3): 147
Paper Information
Category: laser devices and laser physics
Received: Mar. 23, 1981
Accepted: --
Published Online: Aug. 23, 2012
The Author Email:
CSTR:32186.14.
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