In order to improve the characteristics of the transverse mode of high-power vertical cavity surface emitting lasers (VCSELs), microlens are used to realize high power and single transverse mode by forming a compound cavity with P-DBR and N-DBR of the VCSEL chip. Convex microlens is fabricated by one-step diffusion-limited wet-etching techniques on GaAs substrate. A novel material structure with nine In0.2Ga0.8As (6 nm)/Ga0.18As0.82P(8 nm) quantum wells is employed to emit the wavelength of 980 nm. The diameter of the active layer is about 100 μm, and the nominal diameter of the microlens is 300 μm. The curvature radius of 959.81 μm and the RMS of the whole microlens surface of 13 nm are obtained. The maximum output power is 180 mW in continuous-wave (CW) operation at room temperature. The far-field FWHM divergence angle θ∥and θ⊥of the single device at a current of 1500 mA is 7.8°, 8.4°, respectively. The operation performance between microlens-integrated VCSEL and ordinary VCSEL is also discussed.