Highly conducting ZnO:Al (AZO) films are normally prepared through substrate heating and post-annealing in reducing atmosphere, which is deleterious to maintain the high transparency of films and the overall so-lar cell performance. Here we fabricate AZO films through one-step sputtering at room temperature using oxygen-deficient targets prepared via double crucible method. The best-performed AZO film achieves a low resistivity of 4.4 × 10-4 . cm, a high haze factor of 35.0%, and optimizes the efficiency of Cu (In, Ga)Se2 solar cell with a high value of 14.15%. This letter demonstrates that oxygen deficiency can induce high surface texture, conductivity, and boost solar cell performance.