Journal of Optoelectronics · Laser, Volume. 36, Issue 5, 464(2025)

Dynamically tunable absorber based on vanadium dioxide and photoconductive silicon metasurface

WANG Xinke1, JU Jiaxin2, LI Na2, YAN Xiaobo1, HAN Lianfu3, and FU Changfeng2、*
Author Affiliations
  • 1School of Physics and Electronic Engineering, Northeast Petroleum University, Daqing, Heilongjiang 163318, China
  • 2School of Electronic and Information Engineering, Changshu Institute of Technology, Suzhou, Jiangsu 215500, China
  • 3School of Electrical and Automation Engineering, Changshu Institute of Technology, Suzhou, Jiangsu 215500, China
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    Aiming at the current limitation that most terahertz (THz) absorbers can only possess a single narrow absorption peak and are unable to achieve dynamically tunable absorption to meet practical demands,a dynamic tunable absorber based on vanadium dioxide (VO2) and photoconductive silicon (PSi) metasurface in THz regime is proposed in this paper.The proposed design consists of five layers,namely the PSi patterned layer,two layers of silicon dioxide (SiO2) dielectric layers,the VO2 modulation layer and the gold (Au) metal substrate.The simulation results show that the designed absorber has the dual-band absorptive characteristic with a conductivity of 10 S/m for VO2 (σvo2) and 1.5×105 S/m for PSi (σPSi).The absorptivity (A(ω)) in the dual-band of 0.50—0.79 THz and 1.93—2.25 THz is over 90%,and the corresponding relative bandwidths are 44.96% and 15.31%,respectively.For σvo2=2×105 S/m and σPSi=1.5×105 S/m, the designed absorber exhibits a single-band absorptive characteristic in 0.96—1.63 THz with a relative bandwidth of 51.74% (A(ω)>90%).The proposed design in this paper has the characteristics of wide-angle stability (60°),polarization insensitivity and dynamic tunable wave-absorption,which has potential application value in multifunctional devices such as modulation,sensing and electromagnetic stealth.

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    WANG Xinke, JU Jiaxin, LI Na, YAN Xiaobo, HAN Lianfu, FU Changfeng. Dynamically tunable absorber based on vanadium dioxide and photoconductive silicon metasurface[J]. Journal of Optoelectronics · Laser, 2025, 36(5): 464

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    Paper Information

    Received: Dec. 11, 2023

    Accepted: Apr. 24, 2025

    Published Online: Apr. 24, 2025

    The Author Email: FU Changfeng (fuchangfeng8001@126.com)

    DOI:10.16136/j.joel.2025.05.0629

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