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Chinese Journal of Lasers, Volume. 17, Issue 3, 159(1990)

Visible AIGaAs TS semiconductor laser with a large optical cavity

[in Chinese]1, [in Chinese]1, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    Visible AlGaAs terraced substrate semiconductor lasers with a large optical cavity has been fabricated. Its wavelength ranges from 717.2nm to 770.0nm, threshold current is 300mA at room temperature CW operation. It operates with a single mode at 1.5 times threshold. Some of the electrical and optical properties of the device are given.

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    large optical cavityLPEterraced substrate
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    [in Chinese], [in Chinese], [in Chinese]. Visible AIGaAs TS semiconductor laser with a large optical cavity[J]. Chinese Journal of Lasers, 1990, 17(3): 159

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    Paper Information

    Category: Laser physics

    Received: May. 2, 1988

    Accepted: --

    Published Online: Nov. 12, 2007

    The Author Email:

    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology