A low-smear interline transfer charge coupled device (CCD) image sensor, with an effective array size of 2 048×2 048 elements and a pixel size of 9 μm × 9 μm, was designed and developed. To achieve low-smear characteristics, a p-well was designed and fabricated to form a barrier around the vertical CCD buried channel, reducing the entry of photo generated electrons into the channel. A microlens array was designed and fabricated in the photosensitive region to converge incident light into the photosensitive region and reduce stray light entering the vertical CCD channel. A light-blocking tungsten metal cover was designed and produced for the vertical CCD outside the photosensitive area. After testing, the device dispersion reached −82 dB, which meets the normal use requirements of the device.