Unexpected large remnant polarization in Sn-doped Bi<sub>4</sub>Ti<sub>3</sub>O<inline-formula><math display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><msub><mrow></mrow><mrow><mn>1</mn><mn>2</mn></mrow></msub></math></inline-formula> ferroelectric film by chemical solution deposition

Y. Zhang; D. P. Song; Z. Z. Hui; H. N. Zhu; J. Yang

doi:10.1142/S2010135X24500279

Journal of Advanced Dielectrics, Volume. 15, Issue 3, 2450027(2025)

Unexpected large remnant polarization in Sn-doped Bi₄Ti₃O $_{12}$ ferroelectric film by chemical solution deposition

Y. Zhang¹, D. P. Song^1,2、*, Z. Z. Hui², H. N. Zhu¹, and J. Yang^3、**

Author Affiliations

¹Department of Physics, Jiangsu University of Science and Technology, Zhenjiang 212000, P. R. China

²Anhui Province Quartz Sand Purification and Photovoltaic Glass Engineering Research Center, Chuzhou 233100, P. R. China

³School of Materials science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, P. R. China

show less

The A-site rare earth-doped Bi₄Ti₃O $_{12}$ (BTO) has been highly interested in nonvolatile ferroelectric random memory devices, piezoelectric devices, electro-optical devices, capacitors, sensors, transducers, etc., due to its low coercive field and superior fatigue resistance properties. However, single B-site doping has not received corresponding attention. In this work, BTO and Bi₄Ti $_{3.9}$ Sn $_{0.1}$ O $_{12}$ (BTS) thin films were prepared by sol–gel method, in which the doping of Sn effectively restrained the grain growth and decreased the grain size, as well as diminished the formation of oxygen vacancies and enhanced the breakdown field. This leads to a significant enhancement of the ferroelectric properties of the BTO films. The final BTS films exhibit excellent saturation P–E loops with a remnant polarization (2 $P_{r}$ ) of 94.4 $μ$ C/cm² and a coercive field (2 $E_{c}$ ) of 0.69MV/cm at a maximum electric field of 2.8MV/cm. The ferroelectric fatigue and dielectric properties of BTS film were also characterized. The results suggest that doping of Sn at B-site can effectively improve the breakdown strength and enhance the ferroelectric properties of the BTO film.

Note: This section is automatically generated by AI . The website and platform operators shall not be liable for any commercial or legal consequences arising from your use of AI generated content on this website. Please be aware of this.

Tools

Get Citation

Copy Citation Text

Y. Zhang, D. P. Song, Z. Z. Hui, H. N. Zhu, J. Yang. Unexpected large remnant polarization in Sn-doped Bi₄Ti₃O $_{12}$ ferroelectric film by chemical solution deposition[J]. Journal of Advanced Dielectrics, 2025, 15(3): 2450027

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites