A one-dimensional Mason model was used to study the effect of the piezoelectric layer and electrode thickness ratio on the effective electromechanical coupling coefficients of FBAR resonators. As the proportion of piezoelectric layer thickness increases, the effective electromechanical coupling coefficient of the resonator gradually increases. A high-frequency FBAR resonator was developed via film thickness optimization and chip fabrication. Based on adopting trapezoidal circuit structures, the effects of the stages of the filter, ratio of static capacitance in series and parallel resonators, and series inductance of parallel resonators on the suppression of filter stopband were studied. Through chip fabrication, an FBAR filter chip with a center frequency of 4.4 GHz, minimum passband loss of 2.3 dB, -1 dB bandwidth of 112 MHz, and near end out of band suppression of better than 50 dBc on both sides of the passband was prepared, thus providing a reference for the development of high-frequency and high-suppression FBAR filters.