Chinese Journal of Lasers, Volume. 22, Issue 5, 361(1995)

Near IR Laser-induced Chemical Etching of the InP(100) Surface

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    Laser-induced chemical etching of the InP (100) surface with a chlorinemolecular is investigated using a Nd: YAG laser at 1064 um. The mass and velocitydistributions Of reaction Products at different surface temperatures (290 K and 560 K) are determined by the time-resolved mass spectrometry. Both laser fluence and the normalcomponent of the incident Cl2 molecules' translational energy enhance the near-IR laserinduced etching reaction Of the InP (100) surface.A chemical reaction mechanism isproposed that a rate determined step might be the controlling of factor the laser-induced thermal desorption of the adsorbed surface reaction products.

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    [in Chinese], [in Chinese]. Near IR Laser-induced Chemical Etching of the InP(100) Surface[J]. Chinese Journal of Lasers, 1995, 22(5): 361

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    Received: Jun. 16, 1994

    Accepted: --

    Published Online: Aug. 17, 2007

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