For 808 nm high power laser used as pump source, Al-free active-region laser diode was designed and fabricated, consisting of InGaAsP/GaInP. In this work, a double asymmetric structure of cladding and waveguide layers to reduce the thermal resistance and optical loss of P-side layers were proposed. By optimizing the MOCVD growth of As and P hybrid material, InGaAsP single-crystal epitaxial film with steep interface was fabricated. The threshold current is 1.5 A at room temperature and the slope efficiency is 1.26 W/A. The output power is 10.5 W at 10 A and the power efficiency is 58%. Under continuous wave (CW) operation, the maximum output power is 23 W@24.5 A, while it can reach 54 W@50 A under quasi continuous wave (QCW) mode without catastrophic optical damage (COD). No power degradation or COD occurred for accelerated aging over 4 200 h at 15 A, showing high long-term reliability of Al-free active-region 808 nm laser diode.