Journal of Infrared and Millimeter Waves, Volume. 40, Issue 1, 19(2021)

Stress evolution and its effects on the detection performance of self-rolled quantum well infrared detector

Fei ZHANG1,2,3, Gao-Shan HUANG2、*, Xiao-Fei NIE4, Hong-Lou ZHEN4, Yong-Feng MEI2, and Run-Hua FAN1,3、**
Author Affiliations
  • 1College of Ocean Science and Engineering,Shanghai Maritime University,Shanghai 201306,China
  • 2Department of Materials Science,State Key Laboratory of ASIC and Systems,Fudan University,Shanghai 200433,,China
  • 3Shanghai Engineering Technology Research Centre of Deep Offshore Material,Shanghai Maritime University,Shanghai 201306,China
  • 4State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
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    In this study, we investigate the stress evolution and its effects on the detection performance of self-rolled quantum well infrared detector. It is found that tensile stress can move the energy level of conduction band up, while compressive stress moves it down. The band movement of self-rolled film with double quantum wells depends on the change of resultant stresses in the two quantum wells. The rolled-up sample can effectively transform the stress change into strain, so as to weaken the impact of ambient temperature and enhance the stability of infrared devices. The wrinkled film has higher compressive stress compared with the rolled-up sample, which results in lower responsivity. When the same bias voltage is applied, the voltage responsivity of the rolled-up sample is about 2.5 times higher than that of the wrinkled sample.

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    Fei ZHANG, Gao-Shan HUANG, Xiao-Fei NIE, Hong-Lou ZHEN, Yong-Feng MEI, Run-Hua FAN. Stress evolution and its effects on the detection performance of self-rolled quantum well infrared detector[J]. Journal of Infrared and Millimeter Waves, 2021, 40(1): 19

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    Paper Information

    Category: Research Articles

    Received: Jul. 13, 2020

    Accepted: --

    Published Online: Aug. 30, 2021

    The Author Email: Gao-Shan HUANG (gshuang@fudan.edu.cn), Run-Hua FAN (rhfan@shmtu.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2021.01.004

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