By the plasma enhanced atomic layer deposition (PEALD) technique, the N δ-doped Cu2O films are prepared with NH3 as the doping source. The effects of N-doping on the surface morphology, optical and electrical properties of Cu2O films are studied. The study results show that the N-doping causes the lattice distortion and the surface roughness of the N δ-doped Cu2O thin films increases. The bandgap width of the N δ-doped Cu2O thin films increases from 2.70 eV to 3.20 eV, and the absorption edge becomes steep. The carrier concentration of the doped sample is 6.32×1019 cm-3, enhanced by one order of magnitude comparing with that of the un-doped samples (5.77×1018 cm-3).