Semiconductor Optoelectronics, Volume. 44, Issue 5, 679(2023)

Low-voltage Thin Film Lithium Niobate Electro-optic Modulator for 1064nm

XU Wei*, LI Zhiqi, GUO Cuijuan, and BAI Jinjun
Author Affiliations
  • [in Chinese]
  • show less

    The low half-wave voltage electro-optic modulator is crucial for achieving large-scale photonic integration. This article proposes a thin film lithium niobate Mach-Zehnder electro-optic modulator with a half-wave voltage below 1.5V. The design is based on a single crystal thin film lithium niobate material on an insulator. The influence of the straight waveguide, multimode interference coupler, bent waveguide, and modulation arm on the electro-optic modulator is analyzed. The results show that when the length of the modulation arm is 3mm, this thin film lithium niobate electro-optic modulator has a low half-wave voltage of 1.05V, a low loss of 0.319dB, and a high extinction ratio of 27dB. At the same time, the modulator has a half-wave voltage-length product of 0.315V·cm, high modulation efficiency, and a half-wave voltage compatible with CMOS technology, which is beneficial for large-scale photonic integration.


    Get Citation

    Copy Citation Text

    XU Wei, LI Zhiqi, GUO Cuijuan, BAI Jinjun. Low-voltage Thin Film Lithium Niobate Electro-optic Modulator for 1064nm[J]. Semiconductor Optoelectronics, 2023, 44(5): 679

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information


    Received: Jul. 3, 2023

    Accepted: --

    Published Online: Nov. 20, 2023

    The Author Email: Wei XU (