13N ultra-high purity germanium single crystal is the core material for producing ultra-high purity germanium detectors. This article obtains reduced germanium ingots by reduction method, then purifies them by horizontal zone refining method to obtain 12N high-purity germanium polycrystals, and finally grows 13N ultra-high purity germanium single crystals by Czochralski method. The performance of 13N ultra-high purity germanium single crystal was tested and studied through low-temperature Hall test, dislocation density test, and deep level transient spectroscopy (DLTS) detection. The low-temperature Hall results show that the average mobility of the crystal head cross-section is 4.515×104 cm2·V-1·s-1, the carrier concentration is 1.176×1010 cm-3, and the conductivity is p-type, the dislocation density at the crystal head is 2 256 cm-2. The average mobility of the tail section is 4.620×104 cm2·V-1·s-1, the carrier concentration is 1.007×1010 cm-3, and the conductivity type is p-type, the dislocation density at the tail of the crystal is 2 589 cm-2. The concentration of deep level impurities in the crystal is 1.843×109 cm-3. The results indicate that the crystal is 13N ultra-high purity germanium single crystal.