Tunnel junction (TJ) is one of the key technologies of high voltage vertical multiple photovoltaic cells (HVVMPC). In this paper, the performance comparison of HVVMPC based on Si doped and Te doped AlGaAs / GaAs TJ is introduced. The output performance of the two devices under different optical power and temperature is compared. The power coefficient and temperature coefficient of the two devices are obtained. The results show that Te doped HVVMPC has high efficiency. On this basis, the effects of series resistance, doping concentration and sub cell thickness on the external quantum efficiency (EQE) of HVVMPC under different bias voltage and the relationship between current mismatch characteristics and temperature are also discussed. Based on the correlation analysis and discussion, more ideas are provided for the optimization of HVVMPC with more sub units.