The laterally excited bulk wave resonators (XBARs) based on thin film lithium niobate (LN) have both large electromechanical coupling coefficient (K2) and high resonant frequency (f) characteristics, which is expected to fulfill the frequency requirements for 5G applications. However, the single-layer XBAR structure with conventional LN film has poor temperature stability and low temperature coefficient of frequency (TCF). In this paper, a SiO2/LN bilayer structure XBAR with SiO2 temperature compensation layer is proposed, and a finite element model for accurate analysis of the layered structure XBAR is established. The theoretical analysis shows that the first order antisymmetric (A1) Lamb wave is excited as the main mode on this bilayer structure XBAR. High resonant frequency (f ~4.75 GHz) and large electromechanical coupling coefficient (K2~8%) can be obtained by reasonably optimizing the structural parameters configuration, while its temperature stability is also significantly improved (TCF~-36.1×10-6/℃). The TCF is increased by nearly 70×10-6/℃ compared with the single-layer XBAR structure. The study provides a theoretical basis for developing temperature compensated acoustic filter with high-frequency and large bandwidth.