Chinese Journal of Lasers, Volume. 21, Issue 2, 126(1994)
Laser Crystallization Technique for Fablication of Visible Luminecent Silicon Quantum-well
Visible-photoluminesce at room temperatur has been observed from a-Si:H/a-SiNx:H multi-quantum-well (MoW) structures crystallized by Ar+ laser annealing technique. We have also studeid the dependence of the photoluminescence ark positions and full width of half maximum (PWHM) on the thickness of well layers and the laser powers.
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[in Chinese], [in Chinese], [in Chinese]. Laser Crystallization Technique for Fablication of Visible Luminecent Silicon Quantum-well[J]. Chinese Journal of Lasers, 1994, 21(2): 126
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