We design InGaAs/GaAsP periodic gain structure quantum wells for 980 nm laser wavelength. The GaAsP material with a wider band gap is used as the barrier layer instead of conventional material GaAs. It will solve the problem that the efficiency is decreased with increasing temperature, and will meet the requirement of long-life laser working. The periodic gain structure quantum wells will increase the gain, decrease the threshold current and improve the output power. The new structured 4×4 array with an element aperture of 30 μm has a 2 W continuous output power at 5.88 A current. The narrow pulse output power can reach to 30 W at the pulse width of 1 μs, repetition rate of 100 Hz, and work current of 60 A. The results all above have not reached saturation. The far-field angles at the current of 1～4 A are all below 16°. We test the reliability of the array. The life at 30 ℃ is as high as 5280 h or above. The main factors affecting the reliability of high power vertical-cavity surface-emitting laser (VCSEL) are studied.