Acta Optica Sinica, Volume. 8, Issue 8, 742(1988)

Rapid laser etching of fused SiO2

PAN DAREN
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  • [in Chinese]
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    Rapid laser etching of fused Si02 has been achieved using a 10.6μm CW CO2 laser and several etchant gases. Etch rates of above 200μm/s and clean, smooth surfaces have been obtained. The observed experimental results are explained in terms of the presented mechanizins.

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    PAN DAREN. Rapid laser etching of fused SiO2[J]. Acta Optica Sinica, 1988, 8(8): 742

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    Paper Information

    Category: Rapid communications

    Received: Jul. 5, 1987

    Accepted: --

    Published Online: Sep. 16, 2011

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