Acta Optica Sinica, Volume. 8, Issue 8, 742(1988)
Rapid laser etching of fused SiO2
Rapid laser etching of fused Si02 has been achieved using a 10.6μm CW CO2 laser and several etchant gases. Etch rates of above 200μm/s and clean, smooth surfaces have been obtained. The observed experimental results are explained in terms of the presented mechanizins.
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PAN DAREN. Rapid laser etching of fused SiO2[J]. Acta Optica Sinica, 1988, 8(8): 742