Chinese Journal of Lasers, Volume. 39, Issue 2, 205003(2012)

Optical Frequency Up-Conversion by Injection Locking Semiconductor Laser with Directly Modulated Baseband Signal

Guo Jingzhong1、*, Yu Jinlong1, Wang Wenrui1, Wu Bo1, Han Bingchen2, Wang Ju1, Liu Yi1, and Yang Enze1
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    A novel scheme of optical frequency up-conversion is proposed by using the high order sideband of the directly modulated low-speed baseband signal for injection locking of a distributed feedback semiconductor laser (DFB-LD). The operational principle of the proposed optical frequency up-conversion scheme is theoretically analyzed. Based on this scheme, optical frequency up-conversion of a 2.5 Gb/s is directly modulated baseband signal to 30, 35 and 40 GHz subcarrier modulation signal respectively. Higher carrier frequency (up to 60 GHz) can also be achieved in potential. The proposed scheme does not need expensive components like high-speed external modulator or high frequency radio frequency (RF) local oscillator, and it has the benefit of simple structure. It provides a viable solution for the optical-wireless hybrid access.

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    Guo Jingzhong, Yu Jinlong, Wang Wenrui, Wu Bo, Han Bingchen, Wang Ju, Liu Yi, Yang Enze. Optical Frequency Up-Conversion by Injection Locking Semiconductor Laser with Directly Modulated Baseband Signal[J]. Chinese Journal of Lasers, 2012, 39(2): 205003

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    Paper Information

    Category: Optical communication

    Received: Aug. 19, 2011

    Accepted: --

    Published Online: Jan. 16, 2012

    The Author Email: Jingzhong Guo (xiaobao@tju.edu.cn)

    DOI:10.3788/cjl201239.0205003

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