Chinese Journal of Lasers, Volume. 32, Issue 2, 161(2005)
High-Saturation Current 14xx nm Strained Quantum Well Lasers
The research of the 14xx nm strained quantum well (SQW) lasers is reported. The 14xx nm AlGaInAs/AlInAs/InP SQW lasers with tapered gain regions emitting at 1430 nm are fabricated. The SQW epitaxial structure is grown by metal organic chemical vapor deposition (MOCVD) and ridge-type waveguide structure with tapered gain regions is used as laser core. The process of preparing double-channel ridge-type waveguide laser epitaxial structure includes lithographic, etching, metallization (P-side
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-Saturation Current 14xx nm Strained Quantum Well Lasers[J]. Chinese Journal of Lasers, 2005, 32(2): 161
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