International Journal of Extreme Manufacturing, Volume. 2, Issue 1, 12005(2020)

The recent development of soft x-ray interference lithography in SSRF

Jun Zhao1,2, Shumin Yang1,2, Chaofan Xue1,2, Liansheng Wang1,2, Zhaofeng Liang1, Lei Zhang2, Yong Wang1,2, Yanqing Wu1,2、*, and Renzhong Tai1,2
Author Affiliations
  • 1Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, CAS, Shanghai, People’s Republic of China
  • 2Shanghai Institute of Applied Physical, CAS, Shanghai, People’s Republic of China
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    This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility. Dual-beam, multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline. To improve the experimental performance, a precise real-time vibration evaluation system has been established; and the lithography stability has been greatly improved. In order to meet the demands for higher resolution and practical application, novel experimental methods have been developed, such as high-order diffraction interference exposure, high-aspect-ratio and large-area stitching exposure, and parallel direct writing achromatic Talbot lithography. As of now, a 25 nm half-pitch pattern has been obtained; and a cm2 exposure area has been achieved in practical samples. The above methods have been applied to extreme ultraviolet photoresist evaluation, photonic crystal and surface plasmonic effect research, and so on.

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    Jun Zhao, Shumin Yang, Chaofan Xue, Liansheng Wang, Zhaofeng Liang, Lei Zhang, Yong Wang, Yanqing Wu, Renzhong Tai. The recent development of soft x-ray interference lithography in SSRF[J]. International Journal of Extreme Manufacturing, 2020, 2(1): 12005

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    Paper Information

    Category: Topical Review

    Received: Dec. 3, 2019

    Accepted: --

    Published Online: Jun. 4, 2020

    The Author Email: Wu Yanqing (wuyanqing@sinap.ac.cn and tairenzhong@sinap.ac.cn)

    DOI:10.1088/2631-7990/ab70ae

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