Journal of Infrared and Millimeter Waves, Volume. 41, Issue 4, 685(2022)

High power 793 nm diode lasers

Kun ZHOU1,2, Lin-An HE1,2, Yi LI1,2, Yu-Wen HE1,2, Liang ZHANG1,2, Yao HU1,2, Sheng-Zhe LIU1,2, Xin YANG1,2, Wei-Chuan DU1,2、*, Song-Xin GAO1,2, and Chun TANG1,2
Author Affiliations
  • 1Institute of Applied Electronics,CAEP,Mianyang 621900,China
  • 2The Key Laboratory of Science and Technology on High Energy Laser,CAEP,Mianyang 621900,China
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    To satisfy the need of Thulium-doped fiber laser pump source, 793 nm high-power semiconductor laser emitters and fiber-coupled module were developed. The laser epitaxy adopts the large asymmetric optical cavity waveguide structure to reduce the mode loss. The waveguide adopts aluminum free GaInP material which improves the facet damaged threshold combined with vacuum cleavage passivation process. Through the optimization of epitaxial structure and facet coating, the output power of the developed laser reaches 12 W@11A, passed the 300 h aging test of 8 W. Seven single emitters were space coupled to 100 μ m 0.22 NA fiber modules. The output power of the model is 40 W@7A, and the electro-optical efficiency is 49.5% @ 40 W.

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    Kun ZHOU, Lin-An HE, Yi LI, Yu-Wen HE, Liang ZHANG, Yao HU, Sheng-Zhe LIU, Xin YANG, Wei-Chuan DU, Song-Xin GAO, Chun TANG. High power 793 nm diode lasers[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 685

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    Paper Information

    Category: Research Articles

    Received: Jan. 21, 2022

    Accepted: --

    Published Online: Dec. 14, 2022

    The Author Email: Wei-Chuan DU (weichuandu@126.com)

    DOI:10.11972/j.issn.1001-9014.2022.04.005

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