Laser & Optoelectronics Progress, Volume. 62, Issue 7, 0714004(2025)

Dual-Wavelength Raman Laser at 1176/1181 nm Based on Raman Gain from YVO4/BaWO4 Raman Crystals

Chunpeng Shi1,2, Jinhui Li3, Quan Sheng1、*, Wei Shi1、**, and Jianquan Yao1
Author Affiliations
  • 1School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China
  • 2Academy of Opto-Electronics, China Electronics Technology Group Corporation, Tianjin 300308, China
  • 3Chengxian College, Southeast University, Nanjing 210088, Jiangsu , China
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    Using yttrium vanadate (YVO4) and barium wolframate (BaWO4) Raman crystals together in the same Stokes wave cavity, a dual-wavelength extracavity Raman laser with wavelengths of 1176 nm and 1181 nm and a frequency difference of about 1 THz is achieved based on their Raman shifts of 891 cm-1 and 926 cm-1, respectively, under pulsed 1064 nm fundamental wave pumping. With incident fundamental laser pulse repetition frequency being 10 kHz and the average power being 10.7 W, the average output power of the dual-wavelength Raman Stokes wave reaches 3.78 W, with corresponding optical efficiency being 35.3%. The pulse width and the peak power are 11 ns and about 34 kW, respectively. The intensities and the temporal behavior of the two wavelengths components in Stokes output are generally consistent. The beam quality factor M2 is no more than 1.2. The results show that the dual-crystal Raman laser can be an effective method for generating dual-wavelength laser output. The various Raman crystals with numerous Raman lines also provide potential choices for dual-wavelength laser output with flexible frequency difference.

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    Chunpeng Shi, Jinhui Li, Quan Sheng, Wei Shi, Jianquan Yao. Dual-Wavelength Raman Laser at 1176/1181 nm Based on Raman Gain from YVO4/BaWO4 Raman Crystals[J]. Laser & Optoelectronics Progress, 2025, 62(7): 0714004

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Oct. 30, 2024

    Accepted: Dec. 2, 2024

    Published Online: Apr. 8, 2025

    The Author Email: Quan Sheng (shengquan@tju.edu.cn), Wei Shi (shiwei@tju.edu.cn)

    DOI:10.3788/LOP242193

    CSTR:32186.14.LOP242193

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