High Power Laser and Particle Beams, Volume. 37, Issue 3, 035001(2025)

Development of 10 kV nanosecond pulse power supply with fast leading edge

Yiming Wang1, Lingyun Wang2, Dongdong Zhang1、*, Yuan Zhou3, Zhiqiang Wang1, Zheng Liu1, and Youjun Kong4
Author Affiliations
  • 1School of Electrical Engineering, Dalian University of Technology, Dalian 116024, China
  • 2Institute of Fluid Physics, CAEP, Mianyang 621900, China
  • 3Automation and Electrical Engineering, Tianjin University of Technology and Education, Tianjin 300222, China
  • 4State Grid Integrated Energy Service Group Co., Ltd., Beijing 100052, China
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    With the development of fast switching characteristics of SiC MOSFET devices, they are widely used in circuit systems that require high-speed and flexible high-voltage pulse output. Studies have shown that the on-time of SiC MOSFETs is mainly affected by the gate drive technology and its implementation. Accordingly, related studies have mostly focused on the optimization of its gate drive method. In this study, a SiC MOSFET gate drive circuit was parametrically tested and optimized, and applied to ultra-fast conduction SiC MOSFET devices to achieve a significant reduction in on-time. To verify the optimization effect, the research team designed and prepared an optimized prototype of the gate boost driver for experimental testing. The test data show that the optimized gate drive voltage regulation method effectively improves the device performance, with a pulse voltage rising edge time of up to 27 ns under 10 kV voltage level and 50 A current conditions.

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    Yiming Wang, Lingyun Wang, Dongdong Zhang, Yuan Zhou, Zhiqiang Wang, Zheng Liu, Youjun Kong. Development of 10 kV nanosecond pulse power supply with fast leading edge[J]. High Power Laser and Particle Beams, 2025, 37(3): 035001

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    Paper Information

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    Received: Nov. 27, 2024

    Accepted: Feb. 11, 2025

    Published Online: Apr. 29, 2025

    The Author Email: Dongdong Zhang (zhdd80@dlut.edu.cn)

    DOI:10.11884/HPLPB202537.240406

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