novel semiconductor laser is proposed which could have multiwavelength cascaded by tunnel junction, and a dual-wavelength semiconductor which has two active regions is grown by MOCVD with GaAs as tunnel junction and InGaAs strain quantum well as the active regions. A ridge structure of 90 μm stripe width is fabricated. The measurement results show that the laser can have two lasing wavelengths, 951nm and 986nm, the slop efficiency reaches 1 12 W/A without coating, and the far-field FWHM are 10° and 36° for horizontal and vertical direction, respectively