Gallium nitride (GaN) high electron mobility transistor (HEMT) has attracted much attention due to its high breakdown field strength, low on-resistance and high conversion efficiency, and it is expected to be applied in power electronics systems. However, its high power density and high frequency characteristics bring great challenges to packaging technology. The parasitic inductance parameters in the package of traditional silicon power electronic devices is large, which will cause switch oscillation and other problems, so that the excellent performance of GaN cannot be fully utilized. In addition, the thermal management ability of the package determines the reliability of the power device. If the self-heating effect of the device cannot be well solved, its performance will be reduced, and even the chip will be burned. On the basis of explaining the switching oscillation and thermal management problems caused by traditional packaging technology applied to gallium nitride power electronic devices, the research progress of GaN packaging technology aiming at the above problems are reviewed in detail in this paper, including by optimizing the control circuit, reducing Lg inductancing, improving Rg inhibition of dv/dt, increasing ferrite beads on the gate electrode, PCB layout optimization and increasing magnetic flux offset method to solve the problem of switch oscillation caused by the parasitic inductance, the application of high thermal conductivity material of diamond in devices thermal management, improvement of device package structure and other heat dissipation technologies.