The bismuth/erbium co-doped silica fiber (BEDF) is fabricated by combination of modified chemical vapor deposition (MCVD) technology with atomic layer deposition (ALD) doping technique. The melt stretching treatments are carried out, and its near-infrared luminescence characteristics are studied. The experimental results show that the transmission spectrum intensity of BEDF is decreased with the increase of the stretching length. At the same time, the luminescence intensities at 940 nm and 1100 nm ascribing to bismuth-related active centers (BACs), under the 980 nm pumping, are obviously increased with the increase of the stretching length, and when the stretching length is 1.5 cm, they are enhanced by 8.2 dB and 9.7 dB, respectively. After stretching treatments, the luminescence intensity enhancement of the 4.9 cm-long BEDF may result from the change of valence states of bismuth ions and the decrease of concentrations of BACs. These findings are of great significance for studying the near-infrared luminescent mechanism of bismuth related luminescent materials and improving the luminescent efficiency of luminescent centers.