The ZnO thin film and rare earth (La、Nd) doped ZnO thin films were deposited on Si(111) substrate by RF magnetron sputtering. The X-ray Diffraction (XRD) analysis revealed that ZnO thin film was highly c-axis orientation and RE-doped ZnO thin films were nano-multi-crystal departure from normal growth. The roughness surface figures of the films were observed by Atomic Force Microscopy (AFM). The room temperature Photoluminescence (PL) spectrum indicates that the thin films have strong purple peak at 395 nm and weak green peak at 495 nm. The PL spectrum peak intensity of Re-doped ZnO thin films is different. The results indicate that the peak of Nd-doped ZnO thin films is weakened and that of La-doped ZnO thin films is strengthened, and the causes of PL peak intensity changes are analyzed.