This study is focused on the feasibility of using a novel piezoelectric material PMN-PT，with an electromechanical coupling coefficient of approximately 39.2%，as a piezoelectric material for bulk acoustic wave devices. Based on the air-gap thin film bulk acoustic wave resonator（FBAR），a two-dimensional finite element simulation model of the fused structure FBAR is proposed using the finite-element simulation method. The admittance and Q-value curves of the FBAR，with the aforementioned two structures，are compared via finite-element simulation analysis to verify the clutter suppression and Q-value enhancement ability of the fusion structure for S- and C-band devices. A low-clutter，high-Q-value FBAR based on PMN-PT is designed. The simulation results show that the designed fusion structure can effectively suppress the clutter generated by air-gap FBAR，while increasing the Q-values of S- and C-band devices by 101.8% and 350.4%，respectively.