The temperature coefficient of the conventional thin film bulk acoustic wave resonator(FBAR) filters is around (-30~-25)×10-6/℃, and the electrical performance varies with the environment temperature, This property degrades the electrical performance of the filter which works in a broad temperature rage, and further confines the applications, especially the applications with stringent requirements in insertion loss in the pass band and roll-off in the transitional band, In this paper,a silicon oxide(SiO2) layer with positive temperature coefficient is introduced in the conventional FBAR filters, Filter stack position technique and filter fabrication technique are researched,and a S-band temperature compensated FBAR filter device is developed, whose operation frequency is 3, 1 GHz, the insertion loss is 2, 0 dB, out of band rejection is better than 30 dB, and the temperature coefficient of frequency is -0, 02×10-6/℃,