Transparent photovoltaic (TPV) devices can selectively absorb specific components of the solar spectrum to produce a photovoltaic effect while maintaining the overall transparency of the device. Many studies have employed perovskites in TPV devices to achieve multifunctional systems. However, the narrow bandgap and sharp absorption edge of typical polycrystalline silicon and conventional perovskites hinder them from reaching the high levels of transparency required for aesthetic appeal and architectural integration. In this study, double perovskites with wide and indirect bandgap characteristics were introduced to fabricate TPV devices with long-term stability. During device preparation, we successfully fabricated high-quality Cs₂AgBiBr₆ polycrystalline thin films with low haze and high transparency by incorporating low-pressure post-processing steps. Subsequently, the device parameters were systematically optimized. The fully optimized devices exhibited a power conversion efficiency (PCE) of 1.56% and an average visible transmittance (AVT) of 73%, achieving a balance between power conversion capability and optical transparency.