Ruthenate is a typical complex transition medal oxides of ABO3 type,whichpossesses metallic conductivity. Its film can be used as electrode material in integratedferroelectric devices,etc.In this context,the perovskitic features and conductingmechanisms in BaRuO3 crystal have been reviewed or analyzed.Perovskite BaRuO3 thinfilms of low resistivity (resistivity ranges from 10 -2 10 -3Ω.cm at room temperature)with(110)- orientation have successfully been prepared on Si(100) substrate by ArF excimer pulsed laser deposition (PLD) accompanied with subsequent annealing. Both Auger electron spectroscopy (AES) and Rutherford backscattering spectroscopy (RBS) showed that the film was pure and with good compositional homogeneity while there formed an intermediate diffusion layer between BaRuO3 and Si-substrate.