Journal of Synthetic Crystals, Volume. 53, Issue 4, 551(2024)

Growth and Device Fabrication of Mid to Far-Infrared Cr2+/Fe2+∶CdSe Crystals

HUANG Changbao1, HU Qianqian1,2, ZHU Zhicheng1,2, LI Ya1,2, MAO Changyu1, XU Junjie1, WU Haixin1、*, and NI Youbao1、*
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    In this study, the Cr2+∶CdSe and Fe2+∶CdSe crystals were successfully grown by the Mo-crucible sealed Bridgman method using a vacuum single-crystal furnace with two zones developed by ourselves, and the crystal size reaches 51 mm×110 mm. Cr2+∶CdSe and Fe2+∶CdSe crystals demonstrate obvious absorption in the bands of 1 400~2 400 nm and 2 500~5 200 nm, respectively. The transmittances of Cr2+/Fe2+doped CdSe crystals are close to the transmittance limit of CdSe crystal (~70%) in the 7~15 μm band, and the converted absorption coefficient is about 0.005 cm-1. The Cr2+/Fe2+∶CdSe crystals grown by the Mo-crucible sealed Bridgman method have the advantages of the controllable doping concentration of transition metal ions, uniform doping and high crystal quality. The Cr2+/Fe2+∶CdSe crystals could be used as both mid-infrared laser crystal and far-infrared nonlinear optical crystal material.

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    HUANG Changbao, HU Qianqian, ZHU Zhicheng, LI Ya, MAO Changyu, XU Junjie, WU Haixin, NI Youbao. Growth and Device Fabrication of Mid to Far-Infrared Cr2+/Fe2+∶CdSe Crystals[J]. Journal of Synthetic Crystals, 2024, 53(4): 551

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    Paper Information

    Category:

    Received: Dec. 25, 2023

    Accepted: --

    Published Online: Aug. 22, 2024

    The Author Email: Haixin WU (hxwu@aiofm.ac.cn)

    DOI:

    CSTR:32186.14.

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