This study investigates a mid-infrared on-chip light source based on Ge₂₈Sb₁₂Se₆₀ (GeSbSe) chalcogenide waveguides, utilizing Raman soliton self-frequency shift for wavelength tuning. The waveguides were fabricated using CMOS-compatible processes combining deep ultraviolet lithography and plasma etching. Through optimized dispersion engineering, we designed waveguides with specific structural parameters. Using a 2 μm fiber femtosecond laser with 228 fs pulse width and 27.2 MHz repetition rate as the pump source, we demonstrated continuously tunable mid-infrared Raman soliton self-frequency shift in a GeSbSe waveguide measuring 28.5 mm×1.2 μm×0.6 μm. The excitation threshold energy was as low as 4.89 pJ, with Raman soliton wavelength tunable within the 2?2.165 μm range. To extend the Raman soliton frequency shift spectrum, we propose a suspended GeSbSe strip waveguide structure designed to reduce cladding absorption and enhance optical field confinement. Numerical simulations indicate that this structure could potentially extend the Raman soliton tuning range to 3.2 μm. This research provides new insights for developing compact mid-infrared tunable laser sources, offering significant applications in molecular fingerprint identification and gas sensing.