In this work, phase apodized silicon Bragg grating filters with varying sidewall ridge width and location were investigated, while the resonance wavelength, extinction ratio and rejection bandwidth could be tuned flexibly. The grating filters with a waveguide width of 500 nm and grating period of 400 nm were fabricated and characterized for a proof of concept. The resonance wavelength of the device could be shifted by 4.54 nm with varying the sidewall ridge width from 150 to 250 nm. The corresponding rejection bandwidth could be tuned from 1.19 to 2.03 nm by applying a sidewall ridge location offset from 50 to 200 nm. The experimental performances coincide well with the simulation results. The presented sidewall ridge modulated apodized grating filter can be expected to have great application prospects for optical communications and semiconductor lasers.